摘 要：通过聚苯乙烯小球模板法在硅片上制备倒金字塔微结构，并在硅片边沿制备下沉台阶，后在硅片上表面及下沉台阶上沉积 Pd 膜，使用氧化法获得 PdO 薄膜，构建 PdO/n-Si/PdO 光电探测器。该光电探测器在紫外 - 可见光区和近红外光区均具有明显的响应峰，探测峰的峰值波长随着下沉台阶的高度或工作偏压发生移动。理论模拟结果显示探测器的光谱特性可调主要是利用下沉台阶和工作偏压来改变 PdO/n-Si/PdO 异质结中两个背靠背 PN 结的所在位置的光场分布及空间电荷区实现的。
关键词：双波段；异质结；Si；PbO
DOI:10.19850/j.cnki.2096-4706.2022.16.015
基金项目：国家自然科学基金（61106010）
中图分类号：TN15 文献标识码：A 文章编号：2096-4706（2022）16-0054-04
Dual Band Peak Tunable PdO/n-Si/PdO Heterojunction Photodetector
WU Yan, XING Jiale, WANG Quanyou
(Hefei University of Technology, Hefei 230009, China)
Abstract: Inverted pyramid microstructures are prepared on Si slice by polystyrene small ball template method. Then, the Pd film is deposited on the upper surface of the Si slice and the sinking step. The PdO thin film is obtained by using oxidation method, and the PdO/ n-Si/PdO photodetector is constructed. The photodetector has obvious response peaks in the UV-vis region and near-infrared region, and the peak wavelength of the detection peak moves with the height of the sinking step or the working bias voltage. Theoretical simulation results show that the tunable spectral characteristics of the detector are mainly realized by by using the sinking steps and the working bias voltage to change the light field distribution and space charge region of the two back-to-back PN junctions in the PdO/n-Si/PdO heterojunction.
Keywords: dual band; heterojunction; Si; PdO
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作者简介：吴燕（1997—），女，汉族，安徽安庆人，硕士研究生，研究方向：集成电路设计与测试；邢佳乐（1997—），女，汉族，河南南阳人，硕士研究生在读，研究方向：微纳功能材料与器件；王全优（1999—），男，汉族，山东潍坊人，硕士研究生在读，研究方向：微纳功能材料与器件。