Article Details

Abstract

Based on a domestic 0.25 μm GaAs pHEMT process, this study designs a 1.5-8.5 GHz wideband low-insertion-loss 6-channel switchable filter bank chip. The chip consists of a single-pole six-throw (SP6T) RF switch, band-pass filters, and a switch driver. The RF switch adopts a field-effect transistor (FET) series-shunt hybrid structure, and the switch driver converts the channel switching TTL (3.3 V) signal into a pair of gate control voltages (0 V/-5 V) for the FET switches. Each band-pass filter is realized by cascading high-pass and low-pass elliptic-function filters, featuring low passband insertion loss and high stopband rejection. Measured on a microwave probe station, all channels exhibit an in-band insertion loss of less than 6.5 dB, a return loss better than 12 dB, and a typical stopband suppression greater than 40 dB. This highly integrated and compact multi-channel switchable filter chip has broad application prospects in electronic countermeasures and ultra-wideband radar receivers.

Keywords

GaAs pseudomorphic high electron mobility transistor (pHEMT); wideband; low insertion loss; multi-channel switchable filter bank; monolithic microwave integrated circuit (MMIC)

References

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About the authors

XI Xiaohui (1990—), female, Han ethnicity, born in Zhuanglang, Gansu, engineer, master's degree. Research interests: meteorological information technology, intelligent optimization algorithms. Corresponding author: GAO Chengtai (1998—), male, Han ethnicity, born in Baiyin, Gansu, engineer, master's degree. Research interests: meteorological information technology, network and information security.