摘 要：采用硅基 MEMS 工艺技术制备了具有微同轴传输线与垂直转接结构的微同轴芯片。制备工艺采用先干法刻蚀形成硅立体结构，再进行侧壁选择性金属化工艺，形成了包裹金属的线芯与无金属的硅支撑梁。采用上、中、下 3 层晶圆分别制备了TSV、悬置线芯等结构，并通过晶圆级键合形成了完整的微同轴结构。微波测试结果表明其具有较低的损耗特性。与其他工艺路线相比，硅基 MEMS 微同轴工艺技术具有工艺简单、结构可靠的优点。
关键词：MEMS；微同轴；低插损；空气填充
DOI:10.19850/j.cnki.2096-4706.2022.011.019
中图分类号：TN811 文献标识码：A 文章编号：2096-4706（2022）11-0073-03
Silicon-Based MEMS Micro-Coaxial Process Technology
DONG Chunhui, YANG Zhi, SHEN Xiaofang, LI Hongjun
(The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China)
Abstract: Silicon-based MEMS process technology is used to fabricate a micro-coaxial chip with micro-coaxial transmission line and vertical transfer structure. The fabricate process technology uses the dry etching to form three-dimensional structure of silicon firstly, and then the metal wrapped wire core and metal free silicon support beam are formed by side wall selective metallization process. It uses the upper, middle and lower three layers of wafers to fabricate TSV, suspension wire core and other structures severally, and it forms the complete micro-coaxial structure by wafer-level bonding. Microwave test results show that it has low loss characteristics. Compared with other process routes, the silicon-based MEMS micro-coaxial process technology has the advantages of simple process and reliable structure.
Keywords: MEMS; micro-coaxial; low plug loss; air filled
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作者简介：董春晖（1987—），男，汉族，河北唐山人，工程师，博士研究生，研究方向：射频 MEMS 器件工艺。