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电子工程21年18期

测试分析
吕友成¹,陈仲永¹,聂帆宇¹,叶武剑²
(1. 广州星海集成电路基地有限公司,广东 广州 510006;2. 广东工业大学,广东 广州 510006)

摘  要:ESD 是指“静电释放”。静电是一种客观的自然现象,不均匀分布在芯片本身、人体和机器上以及芯片能够存在的环境及周围的事物上。这些静止的电荷随时都可能通过某种方式释放出来。静电释放的特点是高电压、低电量、小电流和作用时间短。随着电子学系统和集成电路,比如专用集成电路(ASIC)或“片上系统(SOC)”的复杂度增加,测试和分析集成电路对静电释放的防护能力是非常重要的。该文将介绍集成电路产品基于 MK.1TE 测试系统的 ESD 测试方法和分析。


关键词:静电放电;ESD;MK.1TE 测试系统;ESD 击穿的临界电压



DOI:10.19850/j.cnki.2096-4706.2021.18.010


基金项目:广东省重大科技专项(2018B01 0115002、2019B010140002)


中图分类号:TN40                                        文献标识码:A                                 文章编号:2096-4706(2021)18-0035-05


Analysis of Chip Electrostatic Discharge (ESD) Test Based on MK.1TE Test System

LYU Youcheng1 , CHEN Zhongyong1 , NIE Fanyu1 , YE Wujian2

(1.Guangzhou Xinghai Integrated Circuit Center Co., Ltd., Guangzhou 510006, China; 2.Guangdong University of Technology, Guangzhou 510006, China)

Abstract: ESD refers to “electrostatic discharge”. Static electricity is an objective natural phenomenon, which is unevenly distributed in the chip itself, human body and machine, as well as the environment and surrounding things where the chip can exist. These static charges may be released in some way at any time. Electrostatic discharge is characterized by high voltage, low electric quantity, small current and short action time. With the increasing complexity of electronic systems and integrated circuits, such as specific integrated circuits (ASIC) or “system on chip (SOC)”, it is very important to test and analyze the protection ability of integrated circuits against electrostatic discharge. This paper will introduce the ESD test method and analysis of integrated circuit products based on MK.1TE test system.

Keywords: electrostatic discharge; ESD; MK.1TE test system; critical voltage of ESD breakdown


参考文献:

[1] 柯明道 . ESD 静电防护 ( 台湾柯明道教材 ) [EB/ OL].(2011-10-17)[2021-07-03].https://www.docin.com/p-274717358.html.

[2] Thermo Fisher Scientific Inc.ZapMaster MK Series Operations ManualMA-70-000-005-10-B[EB/OL].[2021-08-10]. https://www.doc88. com/p-69416038364262.html.

[3] U.S.A.Department of Defense. MIL-STD-883G method 3015.7 [S].Washington D.C.,2006.

[4] Automotive Electronics Council. AEC-Q100-002/003 REV-E [S].AEC Component Technical Committee,2013.


作者简介:吕友成(1990—),男,汉族,广西南宁人,测试工程师,本科,研究方向:芯片测试验证;陈仲永(1983—), 男,汉族,广东阳江人,系统工程师,研究方向:集成电路系统验证;聂帆宇(1991—),男,汉族,江西抚州人,技术中心副总经 理,硕士研究生,研究方向:芯片设计、测试验证项目管理;叶武剑(1987—),男,汉族,广东韶关人,讲师,博士研究生,研究 方向:计算机体系结构深度学习。