摘 要：介绍了一种在微波多芯片模块中，芯片微波端口键合丝较长的情况下，如何对其进行频率拓宽的方法。针对芯片微波端口键合丝引入的失配情况进行了分析和准确的模型提取，并以此得出了一个有效的匹配电路结构（T 形结）。在键合丝长度相同的情况下，此 T 形匹配方式将成倍提高其使用频率，改善电路性能。同时，此 T 形匹配结构简单，便于设计和应用。
关键词：T 形结；键合丝；芯片
DOI:10.19850/j.cnki.2096-4706.2022.02.020
中图分类号：TN402 文献标识码：A 文章编号：2096-4706（2022）02-0078-03
A T-Shaped Matching Circuit Which Can Improve the Cut-Off Frequency of Bonding Wire
LUO Jian
(The 13th Research Institute of China Electronics Technology Corporation, Shijiazhuang 050051, China)
Abstract: This paper introduces a method of how to broaden the frequency of microwave multi chip module when the bonding wire of Chip microwave port is long. Aiming at the mismatch situation of introducing the chip microwave port bonding wire, it is analyzed and the accurate model is extracted. According to this, an effective matching circuit structure (T-junction) is obtained. When the length of bonding wire is the same, this T-shaped matching method will multiply its use frequency and improve the circuit performance. At the same time, the T-shaped matching structure is simple and convenient for design and application.
Keywords: T-junction; bonding wire; chip
参考文献：
[1] HASSAINE N，CONCILIO F. Modeling and high frequency characterization of short links for high performance integrated circuits. Experimental validation and CAD formulas [C]//Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference-IMOC 2003.（Cat.No.03TH8678）.Foz do Iguacu：IEEE，2003：507-512.
[2] MEI S，ISMAIL Y I. Modeling skin and proximity effects with reduced realizable RL circuits [J]. IEEE Transactions on Very Large Scale Integration （VLSI） Systems，2004，12（4）：437-447.
[3] YANG S Y，XIANG D W，BRYANT A，et al. Condition Monitoring for Device Reliability in Power Electronic Converters：A Review [J].IEEE Transactions on Power Electronics，2010，25（11）：2734-2752.
[4] ZHANG Z R，GAO J C，FLOWERS G T，et al. The Impact of Connection Failure of Bonding Wire on Signal Transmission in Radio Frequency Circuits [J].IEEE Transactions on Components，Packaging and Manufacturing Technology，2020，10（10）：1729-1737.
[5] PEDERSEN K B，KRISTENSEN P K，POPOK V，et al.Degradation Assessment in IGBT Modules Using Four-Point Probing Approach [J].IEEE Transactions on Power Electronics，2015，30（5）：2405-2412.
作者简介：罗建（1981—），男，汉族，四川眉山人，工程师，硕士研究生，研究方向：3D-SIP 及微系统。