摘 要：对宽带有源巴伦电路结构进行了研究，基于 0.13 μm GaAs pHEMT 工艺，采用电磁仿真软件设计一款2 GHz ～ 18 GHz 单片集成宽带有源巴伦芯片。经过流片加工及装配测试，有源巴伦芯片在 2 GHz ～ 18 GHz 工作频段范围 ,输入到两输出端小信号增益分别为 3.0 dB ～ 3.5 dB、3.5 dB ～ 4.7 dB，两输出端口幅度差≤ 1.2 dB，相位差 180±5°以内，输出 P1 dB 功率值大于 4 dBm，直流功耗约 5 V/50 mA。芯片尺寸为 1.4 mm×1.9 mm×0.07 mm。实测与仿真结果具有一定的一致性。
关键词：单片集成；有源巴伦；幅度差；相位差
DOI:10.19850/j.cnki.2096-4706.2022.06.014
中图分类号：TN43 文献标识码：A 文章编号：2096-4706（2022）06-0058-04
Design of 2 GHz ～ 18 GHz Broadband Active Balun Chip
YANG Nan, YANG Xuda
(The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China)
Abstract: This paper researches the broadband active balun circuit structure. Based on 0.13 μm GaAs pHEMT process, a 2 GHz ～ 18 GHz monolithic integration broadband active balun chip is designed by adopting electromagnetic simulation software. After flow chip processing and assembly testing, the active baron chip operates in the frequency band range of 2 GHz ～ 18 GHz, the small signal gain of the input to the two outputs is 3.0 dB ～ 3.5 dB and 3.5 dB ～ 4.7 dB respectively. The amplitude difference between the two output ports is less than or equal to 1.2 dB and phase difference is less than 180±5° . The output P1dB power value is greater than 4 dBm, and the DC power consumption is about 5 V/50 mA. The chip size is 1.4 mm×1.9 mm×0.07 mm. There is certain consistency between the measured and simulation result.
Keywords: monolithic integration; active balun; amplitude difference; phase difference
参考文献：
[1] 王维波，张斌 .5.2 ～ 5.8 GHz 有源巴仑 MMIC [J]. 固体电子学研究与进展，2006，26（1）：29-33.
[2] 贺娟 . 宽带有源巴伦的仿真设计 [J]. 空间电子技术，2011，8（3）：58-61.
[3] MANSTRETTA D. A broadband low power low noise active balunwith second order distortion cancellation [J].IEEE Journal of SolidState Circuits，2012，47（2）：407-420.
[4] JUNG K，EISENSTADT W R，FOX R M，et al. Broadband
active balun using combined cascode-cascade configuration [J].IEEE Transactions on Microwave Theory and Techniques，2008，56（8）：1790-1796.
[5] FERNDAHL M，VICKES H.O. The matrix balun—A transistor based module for broadband applications [J].IEEE Transactions on Microwave Theory and Techniques，2009，57（1）：53-56.
作者简介：杨楠（1990—），女，汉族，山东菏泽人，工程师，硕士，研究方向：集成电路设计。