摘 要：文章介绍了基于 GaAs 0.15 μm pHEMT 工艺的 0.8 ～ 18 GHz 放大衰减多功能芯片的设计，给出了在片测试结果。该芯片集成了共源共栅行波放大单元、三位数控衰减单元和三位并行驱动单元，在 0.8 ～ 18 GHz 的超宽带频率范围内，噪声系数典型值≤ 4.5 dB，增益≥ 11 dB，且具有 3 dB 的正斜率，P-1 大于 13 dBm，输入输出驻波≤ 1.8，3 bit 数控衰减单元 2/4/8 dB，衰减精度≤ 0.5 dB。其中放大器采用单电源 +3.3 V 供电，工作电流小于 60 mA，TTL 驱动电路采用 -5 V 供电，工作电流小于 3 mA。芯片尺寸为：2.6 mm×2.8 mm×0.1 mm。
关键词：pHEMT；0.8 ～ 18 GHz；放大衰减多功能芯片
DOI:10.19850/j.cnki.2096-4706.2023.02.014
中图分类号：TN72 文献标识码：A 文章编号：2096-4706（2023）02-0053-04
0.8 18 ～ GHz Amplification and Attenuation Multi-Function Chip
LIU Ying, LIAO Xuejie, WU Haifeng, WANG Cetian, HUA Yunan
(Chengdu Ganide Technology Co., Ltd., Chengdu 610220, China)
Abstract: In this paper, the design of 0.8~18 GHz amplification and attenuation multi-function chip based on GaAs 0.15 μm pHEMT process is introduced, and on wafer test results are presented. The chip integrates Cascade traveling wave amplifier, 3-bit digital attenuator and the TTL drive circuit. In the 0.8~18 GHz ultra wideband frequency range, the typical values of noise coefficient is less than and equal to 4.5 dB, a gain is more than and equal to 11 dB, and it has 3 dB Positive Slope, the P-1 is more than 13 dBm, the input and output of VSWR are less than and equal to 1.8, the 3-bit digital attenuator 2/4/8 dB, the battenuation accuracy is less than and equal to 0.5 dB. The amplifier uses the single +3.3 V power supply, and the working current is less than 60 mA. The TTL drive circuit uses the -5 V power supply, and the working current is less than 3 mA. The chip size is 2.6 mm×2.8 mm ×0.1 mm.
Keywords: pHEMT; 0.8 ～ 18 GHz; amplification and attenuation multi-function chip
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作者简介：刘莹（1986.05—），女，汉族，四川夹江人，高级工程师，硕士研究生，研究方向：射频微波毫米波芯片设计。