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电子工程22年12期

一种基于 CMOS 工艺的低相噪压控振荡器的设计
齐贺飞,王磊,王鑫,王绍权,张梦月
(中国电子科技集团公司第十三研究所,河北 石家庄 050051)

摘  要:基于标准 CMOS 工艺,设计了一款适用于无线通信的基于标准 CMOS 工艺的频带压控振荡器,该芯片的中心频率 2.8 GHz,芯片面积 0.5×0.5 mm2,典型功耗为 11 mA@3.3 V。测试结果表明,在 0.8 V ~ 2.5 V 的电压调节范围内,压控振荡器输出频率范围为 2.3 GHz ~ 3.3 GHz,通过电容阵列实现了 1 GHz 的调谐带宽,在 2.8 GHz频率时的典型相位噪声为 -81 dBc/Hz@10 kHz,压控振荡器的典型增益为 40 MHz/V。


关键词:压控振荡器;可变电容;相位噪声



DOI:10.19850/j.cnki.2096-4706.2022.012.013


中图分类号:TN752                                      文献标识码:A                                       文章编号:2096-4706(2022)12-0052-04


Design of a Low Phase Noise Voltage Controlled Oscillator Based on CMOS Process

QI Hefei, WANG Lei, WANG Xin, WANG Shaoquan, ZHANG Mengyue

(The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China)

Abstract: Based on standard CMOS process, a band voltage controlled oscillator based on standard CMOS process for wireless communication is designed. The center frequency of the chip is 2.8 GHz. The chip area is 0.5×0.5 mm2 , and the typical power consumption is 11 mA@3.3 V. The test results show that in the voltage regulation range of 0.8 V ~ 2.5 V, the output frequency range of voltage controlled oscillator is 2.3 GHz ~ 3.3 GHz, the tuning bandwidth of 1GHz is realized through capacitor array, and the typical phase noise at 2.8 GHz frequency is -81 dBc/Hz@10 KHz, the typical gain of voltage controlled oscillator is 40 MHz/V. 

Keywords: voltage controlled oscillator; variable capacitance; phase noise


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作者简介:齐贺飞(1988—),男,汉族,河北石家庄人,工程师,硕士,研究方向:数字和模拟混合集成电路设计。