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9V GaN基高压LED芯片桥接电极的设计与制备
马介渊,周婷,殷榆婷,王凯雪
(1.西安联创生物医药孵化器有限公司,陕西 西安 710077;2.西安市碑林区创意产业发展有限公司,陕西 西安 710068;3.中兴通讯股份有限公司,陕西 西安 710119)
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摘  要:本文提出的方案以不引起SiO2保护层侧壁的桥接电极发生断裂为前提,通过调整芯粒单元间深隔离槽保护层的厚度,来找到恰当的保护层厚度和桥接电极厚度组合,以确保芯片的桥接电极可靠并且不漏电。基于此,制备可应用于0.2~0.3W照明的9V HV LED芯片,并用微电流和工作电流检验芯片各单元的发光均匀性,以及验证桥接电极电气连接的可靠性。最后,将芯片封装成白光灯珠,并测量其光通量。


关键词:高压LED;保护层;桥接电极


作者介绍:

马介渊(1982.05-),男,回族,宁夏海原人,职员,中级工程师,硕士。研究方向:电子信息。


中图分类号:TN312.8    文献标识码:A 文章编号:2096-4706(2018)02-0000-03

Designand Fabrication of Bridging Electrodes of 9V GaN Based High Voltage LED Chip

MA Jieyuan1,ZHOU Ting2,YIN Yuting1,WANG Kaixue3

(1. Xi'an BIO-pharmaceutical Incubator Co.,Ltd.,Xi’an 710077,China;2. Beilin District of Xi'an Creative Industry Development Co.,Ltd.,Xi’an 710068,China;3. Zhongxing Telecommunication Equipment Corporation,Xi’an 710119,China

Abstract:The proposed scheme on the premise of notbreaking the bridging electrodes on the sidewalls of SiO2 protectivelayer,this paperstudied the appropriate thickness of the combination of protective layer andbridging electrode by adjusting the thickness of the protective layer in thedeep isolation trench between the core unit cells,and to ensure that the bridge electrodesof the chip are reliable without leakaging. Based on this,a 9V HV LED chip that could be applied to0.2 ~ 0.3Willumination was prepared. Micro-current and operating current were used totest the luminous uniformity of each units of the chip,and to verify the reliability of thebridge electrode electrical connection. After that,the chips were packaged into white lightbeads, whoseluminous was tested at last.

Keywords:high voltage (HV) LED;passivation (PA) layer;bridge electrode


参考文献:

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