摘 要：对 GaN 行波放大器功放开关进行研究，发现传统功放开关对功放和开关芯片分别进行设计，这样的设计会导致功放开关不能实现最佳的性能。因此采用GaN PHEMT工艺，研制了一款在2～18 GHz频率范围内具有良好性能的超宽带功放开关。为了满足输出功率和增益等指标，功放路采用分布式放大器结构，并将功放与开关进行一体化设计，最终得到性能良好的功放开关。
关键词：GaN；超宽带；功放开关
DOI:10.19850/j.cnki.2096-4706.2021.04.016
中图分类号：TN72 文献标识码：A 文章编号：2096-4706（2021）04-0063-04
The Design of 2 ～ 18 GHz Ultra Wide Band GaN Power Amplifier Switch
WU Jiangang，ZHANG Zhongshan，CUI Liang
（The 13th Research Institute of China Electronics Technology Group Corporation，Shijiazhuang 050051，China）
Abstract：This paper studies the power amplifier switch of GaN traveling wave amplifier，and finds that the traditional power amplifier switch designs the power amplifier and switch chip separately，which will lead to that the power amplifier switch can not achieve the best performance. Therefore，using GaN PHEMT technology，an ultra wide band power amplifier switch with good performance in the frequency range of 2 ～ 18 GHz is developed. In order to meet the targets of output power and gain，the power amplifier adopts the distributed amplifier structure，and carries out integrated design on the power amplifier and switch to get the power amplifier switch with good performance.
Keywords：GaN；ultra wide band；power amplifier switch
参考文献：
[1] MELIANI C，HEINRICH W. True broadband technique for on-chip-series connection of TWAs using differential distributed amplifiers [J].IEEE Microwave and Wireless Components Letters， 2009，19（4）：248-250.
[2] PARK H，LEE S，CHOI K，et al. A 6–18 GHz GaN distributed power amplifier using reactive matching technique and simplified bias network [C]//2017 IEEE Radio Frequency Integrated Circuits Symposium （RFIC）.Honolulu：IEEE，2017：394-397
[3] 张瑛，马凯学，周洪敏，等 . 一种 2 ～ 19GHz 分布式功 率放大器 [J]. 微电子学，2016，46（3）：297-301.
[4] CAMPBELL C，LEE C，WILLIAMS V，et al. A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology [C]//2008 IEEE Compound Semiconductor Integrated Circuits Symposium.Monterey：IEEE，2008：2640-2647.
[5] WU H，LIAO X，LIN Q，et al. A Compact Ultrabroadband Stacked Traveling-Wave GaN on Si Power Amplifier [J].IEEE Transactions on Microwave Theory and Techniques，2018，（5）：3306–3314.
[6] DABAG H，HANAFI B，GOLCUK F，et al. Analysis and design of stacked-FET millimeter-wave power amplifiers [J].IEEE Transactions on Microwave Theory and Techniques，2013，（3）： 1543-1556.
[7] HETTAK K，ROSS T，GRATTON D，et al. High-power broadbandGa N HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors [C]//2012 7th European Microwave Integrated Circuit Conference.Amsterdam:IEEE，2013：215-218.
[8] YU B，MA K，MENG F，et al. A DC-50 GHz SPDT switch with maximum insertion loss of 1.9 dB in a commercial 0.13-μm SOI technology [C]// 2015 International SoC Design Conference（ISOCC）. Gyeongju:IEEE，2015：197-198.
作者简介：吴建刚（1987—），男，汉族，河南兰考人，工程 师，硕士，研究方向：集成电路设计。