摘 要：本文提出的方案以不引起SiO2 保护层侧壁的桥接电极发生断裂为前提，通过调整芯粒单元间深隔离槽保护层的厚度，来找到恰当的保护层厚度和桥接电极厚度组合，以确保芯片的桥接电极可靠并且不漏电。基于此，制备可应用于0.2 ～ 0.3W照明的9V HV LED 芯片，并用微电流和工作电流检验芯片各单元的发光均匀性，以及验证桥接电极电气连接的可靠性。最后，将芯片封装成白光灯珠，并测量其光通量。
关键词：高压LED；保护层；桥接电极
中图分类号：TN312.8 文献标识码：A 文章编号：2096-4706（2018）02-0052-03
Design and Fabrication of Bridging Electrodes of 9V GaN Based High Voltage LED Chip
MA Jieyuan1，ZHOU Ting2，YIN Yuting1，WANG Kaixue3
（1. Xi'an BIO-pharmaceutical Incubator Co.，Ltd.，Xi'an 710077，China；2. Beilin District of Xi'an Creative Industry Development Co.，Ltd.，Xi'an 710068，China；3. Zhongxing Telecommunication Equipment Corporation，Xi'an 710119，China）
Abstract：The proposed scheme on the premise of not breaking the bridging electrodes on the sidewalls of SiO2 protective layer， this paper studied the appropriate thickness of the combination of protective layer and bridging electrode by adjusting the thickness of the protective layer in the deep isolation trench between the core unit cells，and to ensure that the bridge electrodes of the chip are reliable without leakaging. Based on this，a 9V HV LED chip that could be applied to 0.2 ～ 0.3W illumination was prepared. Micro-current and operating current were used to test the luminous uniformity of each units of the chip，and to verify the reliability of the bridge electrode electrical connection. After that，the chips were packaged into white light beads， whose luminous was tested at last.
Keywords：high voltage (HV) LED；passivation (PA) layer；bridge electrode
参考文献：
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作者简介：马介渊（1982.05-），男，回族，宁夏海原人，职员，中级工程师，硕士，研究方向：电子信息。