摘 要：文章设计了一款基于氮化镓 HEMT 工艺的单片射频单刀双掷开关芯片（SPDT switch）。采用宽带匹配结构，实现了超宽带开关特性，覆盖频率 DC-18 GHz，并且在工作带宽内优化了开关耐功率能力。装配后的 S 参数测试结果显示，在DC-18 GHz 内插入损耗最大值在 18 GHz 频点处，为 1.5 dB。连续波耐功率测试表明芯片的输入 P0.1dB 为 40 dBm，具有较高的耐功率能力。芯片尺寸仅为 1.6×1.2 mm2 。
关键词：超宽带；射频开关；单刀双掷；插损；耐功率能力
DOI:10.19850/j.cnki.2096-4706.2021.07.011
中图分类号：TN61；TN303 文献标识码：A 文章编号：2096-4706（2021）07-0041-03
Wideband SPDT GaN Power Switch Chip
DAI Jian，MA Weibin
（The 13th Research Institute of China Electronics Technology Group Corporation，Shijiazhuang 050000，China）
Abstract：A monolithic RF single pole double throw switch（SPDT switch）chip based on GaN HEMT process is designed in this paper. Using broadband matching structure，the UWB switching characteristics are realized，the coverage frequency is DC-18 GHz， and the switching power endurance is optimized within the working wideband. The S-parameter test results after assembly show that the maximum insertion loss in DC-18 GHz is 1.5 dB at the 18 GHz frequency point. The continuous wave power endurance test shows that the input P0.1dB of the chip is 40 dBm，which has high power withstand ability. The chip size is only 1.6×1.2 mm2 。
Keywords：UWB；RF switch；SPDT；insertion loss；power endurance
参考文献：
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作者简介：戴剑（1989—），男，汉族，江苏扬中人，工程师， 硕士，研究方向：集成电路设计。